esd5471x will semiconductor ltd. 1 revision 1.2, 2014/01/15 esd5471x 1-line, bi-directional, transient voltage suppressors descriptions the esd5471x is a bi-directional tvs (transient voltage suppressor). it is specifically designed to protect sensitive electronic components which are connected to power lines, low speed data lines and control lines from over-stress caused by esd (electrostatic discharge), eft (electrical fast transients) and lightning. the esd5471x may be used to provide esd protection up to 30kv (contact and air discharge) according to iec61000-4-2, and withstand peak pulse current up to 6a (8/20 s) according to iec61000-4-5. the esd5471x is available in fbp-02c package. standard products are pb-free and halogen-free. features ? reverse stand-off voltage: 5v max ? transient protection for each line according to iec61000-4-2 (esd): 30kv (c ontact and air discharge) iec61000-4-4 (eft): 40a (5/50ns) iec61000-4-5 (surge): 6a (8/20 s) ? capacitance: c j = 9pf typ. ? low leakage current ? low clamping voltage: v cl = 12v typ. @ i pp = 16a (tlp) ? solid-state silicon technology applications ? cellular handsets ? tablets ? laptops ? other portable devices ? network communication devices http//:www.sh-willsemi.com fbp-02c (bottom view) circuit diagram a = device code * = month code ( a~z) marking (top view) order information device package shipping esd5471x-2/tr fbp-02c 10000/tape&reel
esd5471x will semiconductor ltd. 2 revision 1.2, 2014/01/15 absolute maximum ratings electrical characteristics (t a =25 o c, unless otherwise noted) definitions of electrical characteristics parameter symbol rating unit peak pulse power (t p = 8/20 s) p pk 72 w peak pulse current (t p = 8/20 s) i pp 6 a esd according to iec61000-4-2 air discharge v esd 30 kv esd according to iec61000-4-2 contact discharge 30 operation junction temperature t j 125 o c lead temperature t l 260 o c storage temperature t stg -55~150 o c
esd5471x will semiconductor ltd. 3 revision 1.2, 2014/01/15 electrical characteristics (t a =25 o c, unless otherwise noted) notes: 1) tlp parameter: z 0 = 50 ? , t p = 100ns, t r = 2ns, averaging window from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) contact discharge mode, according to iec61000-4-2. 3) non-repetitive current pulse, according to iec61000-4-5. parameter symbol condition min. typ. max. unit reverse stand-off voltage v rwm 5 v reverse leakage current i r v rwm = 5v 1 a reverse breakdown voltage v br i br = 1ma 5.1 v reverse holding voltage v hold i hold = 50ma 5.1 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 12 v clamping voltage 2) v cl v esd = 8kv 12 v clamping voltage 3) v cl i pp = 1a, t p = 8/20 s 8 v i pp = 6a, t p = 8/20 s 12 v dynamic resistance 1) r dyn 0.28 ? junction capacitance c j v r = 0v, f = 1mhz 9 12 pf v r = 5v, f = 1mhz 6 8 pf
esd5471x will semiconductor ltd. 4 revision 1.2, 2014/01/15 typical characteristics (t a =25 o c, unless otherwise noted) 8/20 s waveform per iec61000-4-5 clamping voltage vs. peak pulse current non-repetitive peak pulse power vs. pulse time contact discharge current waveform per iec61000-4-2 capacitance vs. reveres voltage power derating vs. ambient temperature -5 -4 -3 -2 -1 0 1 2 3 4 5 5 6 7 8 9 10 f = 1mhz v ac = 50mv c j - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 255075100125150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 t 2 t 1 front time: t 1 = 1.25 ?? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t 01234567 6 7 8 9 10 11 pin2 to pin1 pin1 to pin2 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a)
esd5471x will semiconductor ltd. 5 revision 1.2, 2014/01/15 typical characteristics (t a =25 o c, unless otherwise noted) esd clamping (+8kv contact discharge per iec61000-4-2) tlp measurement esd clamping (-8kv contact discharge per iec61000-4-2) -14-12-10-8-6-4-202468101214 -20 -16 -12 -8 -4 0 4 8 12 16 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v)
esd5471x will semiconductor ltd. 6 revision 1.2, 2014/01/15 package outline dimensions fbp-02c recommend land pattern (unit: mm) symbol dimensions in millimeters min. typ. max. a 0.450 0.500 0.550 a1 0.010 -- 0.100 d 0.950 1.000 1.050 e 0.550 0.600 0.650 d1 0.470 ref. e1 0.420 ref. b 0.270 0.320 0.370 b1 0.250 0.300 0.350 e 0.555 0.605 0.655 e1 0.230 ref. l 0.250 0.300 0.350 l1 0.030 ref. l2 0.370 0.420 0.470 l3 0.040 ref. notes: this recommended land pattern is for reference purposes only. please consult your manufacturing group to ensure your pcb design guidelines are met.
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